Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN

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• 作者：Chunming Yin ; Hongtao Yuan ; Xinqiang Wang ; Shitao Liu ; Shan Zhang ; Ning Tang ; Fujun Xu ; Zhuoyu Chen ; Hidekazu Shimotani ; Yoshihiro Iwasa ; Yonghai Chen ; Weikun Ge ; Bo Shen
• 刊名：Nano Letters
• 出版年：2013
• 出版时间：May 8, 2013
• 年：2013
• 卷：13
• 期：5
• 页码：2024-2029
• 全文大小：341K
• 年卷期：v.13,no.5(May 8, 2013)
• ISSN：1530-6992

文摘

Electrically manipulating electron spins based on Rashba spin鈥搊rbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect (CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices.

Keywords:

Surface electron accumulation; InN; ionic liquid; circular photogalvanic effect