Silicon nano
wires (SiNW)
were formed on large grained, electron-beam crystallized silicon (Si) thin films of only 6 渭m thickness on glass using nanosphere lithography (NSL) in combination
with reactive ion etching (RIE). Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) studies revealed outstanding structural properties of this nanomaterial. It could be sho
wn that SiNWs
with entirely predetermined shapes including lengths, diameters and spacings and straight side
walls form independently of their crystalline orientation and arrange in ordered arrays on glass. Furthermore, for the first time grain boundaries could be observed in individual, straightly etched SiNWs. After heat treatment an electronic grade surface quality of the SiNWs could be sho
wn by X-ray photoelectron spectroscopy (XPS). Integrating sphere measurements sho
w that SiNW patterning of the multicrystalline Si (mc-Si) starting thin film on glass substantially increases absorption and reduces reflection, as being desired for an application in thin film photovoltaics (PV). The multicrystalline SiNWs directly mark a starting point for research not only in PV but also in other areas like nanoelectronics, surface functionalization, and nanomechanics.
Keywords:
wires&qsSearchArea=searchText">Silicon nanowires;
multicrystalline;
silicon thin film on glass;
e-beam crystallization;
photovoltaics;
absorption;
reactive ion etching;
EBSD;
TEM;
XPS
