Thermoelectric Properties of n-type ZrNiPb-Based Half-Heuslers

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• 作者：Jun Mao ; Jiawei Zhou ; Hangtian Zhu ; Zihang Liu ; Hao Zhang ; Ran He ; Gang Chen ; Zhifeng Ren
• 刊名：Chemistry of Materials
• 出版年：2017
• 出版时间：January 24, 2017
• 年：2017
• 卷：29
• 期：2
• 页码：867-872
• 全文大小：492K
• ISSN：1520-5002

文摘

Here we investigate the half-Heusler ZrNiPb as a n-type thermoelectric material. Our results show that the n-type ZrNiPb-based materials can achieve high peak power factors, ∼50 μW cm^–1 K^–2, by optimally tuning the carrier concentration via Bi doping. By further Sn-alloying in Pb site, we achieve a significant reduction of lattice thermal conductivity while maintaining the power factor almost unchanged and hence noticeably improve the ZT. Our work demonstrates that n-type ZrNiPb-based half-Heuslers are promising thermoelectric materials.