Novel Nonvolatile Memory with Multibit Storage Based on a ZnO Nanowire Transistor

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• 作者：Jung Inn Sohn ; Su Seok Choi ; Stephen M. Morris ; James S. Bendall ; Harry J. Coles ; Woong-Ki Hong ; Gunho Jo ; Takhee Lee ; Mark E. Welland
• 刊名：Nano Letters
• 出版年：2010
• 出版时间：November 10, 2010
• 年：2010
• 卷：10
• 期：11
• 页码：4316-4320
• 全文大小：344K
• 年卷期：v.10,no.11(November 10, 2010)
• ISSN：1530-6992

文摘

We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 10⁴, a long retention time of over 4 × 10⁴ s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates.

Keywords:

Semiconductor nanowires; nonvolatile memory; ferroelectric nanoparticles