I
n the prese
nt work, we studied the electrodepositio
n of zi
nc oxide sulfide films o
nto mo
nocrystalli
ne
n-I
nP(
ntities/o
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ntities/o
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ntities/o
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nd (100) substrates starti
ng from the combi
ned reductio
n of thiourea, as a sulfide io
n source, a
ndmolecular oxyge
n i
n the prese
nce of zi
nc io
ns usi
ng DMSO as the solve
nt. The possible reactio
ns i
nvolvedi
n the formatio
n of the films were studied through cyclic voltammetry. I
ndepe
nde
nt of electrodepositio
npote
ntial or the crystalli
ne pla
ne employed, a peculiar ho
neycomb bee morphology was observed by SEM i
nthe deposits. The films formed o
n both crystalli
ne pla
nes showed a variable compositio
n that ca
n be adjustedby cha
ngi
ng the electrodepositio
n pote
ntial. The crystalli
ne characterizatio
n of the films was studied throughRHEED. I
n agreeme
nt with the atomic ratio obtai
ned by EDS, the patter
ns obtai
ned showed that the as-grow
n deposits are basically formed by Z
nO, Z
nO
2, a
nd Z
nS. The polyphasic film compositio
n ca
n bereprese
nted by [(Z
nO)
a(Z
nO2)
b(Z
nS)
c], a
nd a ge
neral formatio
n reactio
n for this class of mixtures is proposed.The a
nalysis of their optical properties for the polyphasic films formed o
nto FTO electrode gave a ba
nd gapof 3.46 eV, mea
ni
ng that the films ca
n be co
nsidered as a good alter
native to a layer wi
ndow i
n solar cells.
