Photocurrent Switching of Monolayer MoS2 Using a Metal–Insulator Transition

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• 作者：Jin Hee LeeHamza Zad Gul ; Hyun Kim ; Byoung Hee Moon ; Subash Adhikari ; Jung Ho Kim ; Homin Choi ; Young Hee Lee ; Seong Chu Lim
• 刊名：Nano Letters
• 出版年：2017
• 出版时间：February 8, 2017
• 年：2017
• 卷：17
• 期：2
• 页码：673-678
• 全文大小：405K
• ISSN：1530-6992

文摘

We achieve switching on/off the photocurrent of monolayer molybdenum disulfide (MoS<sub>2sub>) by controlling the metal–insulator transition (MIT). N-type semiconducting MoS<sub>2sub> under a large negative gate bias generates a photocurrent attributed to the increase of excess carriers in the conduction band by optical excitation. However, under a large positive gate bias, a phase shift from semiconducting to metallic MoS<sub>2sub> is caused, and the photocurrent by excess carriers in the conduction band induced by the laser disappears due to enhanced electron–electron scattering. Thus, no photocurrent is detected in metallic MoS<sub>2sub>. Our results indicate that the photocurrent of MoS<sub>2sub> can be switched on/off by appropriately controlling the MIT transition by means of gate bias.