Charge Carrier Trapping and Acoustic Phonon Modes in Single CdTe Nanowires

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• 作者：Shun Shang Lo ; Todd A. Major ; Nattasamon Petchsang ; Libai Huang ; Masaru K. Kuno ; Gregory V. Hartland
• 刊名：ACS Nano
• 出版年：2012
• 出版时间：June 26, 2012
• 年：2012
• 卷：6
• 期：6
• 页码：5274-5282
• 全文大小：472K
• 年卷期：v.6,no.6(June 26, 2012)
• ISSN：1936-086X

文摘

Semiconductor nanostructures produced by wet chemical synthesis are extremely heterogeneous, which makes single particle techniques a useful way to interrogate their properties. In this paper the ultrafast dynamics of single CdTe nanowires are studied by transient absorption microscopy. The wires have lengths of several micrometers and lateral dimensions on the order of 30 nm. The transient absorption traces show very fast decays, which are assigned to charge carrier trapping into surface defects. The time constants vary for different wires due to differences in the energetics and/or density of surface trap sites. Measurements performed at the band edge compared to the near-IR give slightly different time constants, implying that the dynamics for electron and hole trapping are different. The rate of charge carrier trapping was observed to slow down at high carrier densities, which was attributed to trap-state filling. Modulations due to the fundamental and first overtone of the acoustic breathing mode were also observed in the transient absorption traces. The quality factors for these modes were similar to those measured for metal nanostructures, and indicate a complex interaction with the environment.

Keywords:

transient absorption microscopy; semiconductor nanowires; acoustic phonon modes; charge carrier trapping