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Atomic Layer Deposition of In2O3:H from InCp and H2O/O2: Microstructure and Isotope Labe
lin
g Studies
详细信息
查看全文
作者:
Yizhi
Wu
;
Bart MaccoDries Vanhemel
;
Sebastian Köl
lin
g
;
Marcel A. Verheijen
;
Paul M. Koenraad
;
Wilhelmus M. M. Kessels
;
Fred Roozeboom
刊名:ACS Applied Materials & Interfaces
出版年:2017
出版时间:January 11, 2017
年:2017
卷:9
期:1
页码:592-601
全文大小:675K
ISSN:1944-8252
文摘
The atomic layer deposition (ALD) process of hydrogen-doped indium oxide (In
2
O
3
:H) using indium cyclopentadienyl (InCp) and both O
2
and H
2
O as precursors is highly promising for the preparation of transparent conductive oxides. It yields a high growth per cycle (>0.1 nm), is viable at temperatures as low as 100 °C, and provides a record optoelectronic quality after postdeposition crystallization of the films (
ACS Appl. Mat. Interfaces
,
2015
,
7
,
16723−16729, DOI:
Link">10.1021/acsami.5b04420). Since both the dopant incorporation and the film microstructure play a key role in determining the optoelectronic properties, both the crystal growth and the incorporation of the hydrogen dopant during this ALD process are studied in this work. This has been done using transmission electron microscopy (TEM) and atom probe tomography (APT) in combination with deuterium isotope labe
lin
g. TEM studies show that an amorphous-to-crystal
lin
e phase transition occurs in the low-temperature regime (100–150 °C), which is accompanied by a strong decrease in carrier density and an increase in carrier mobility. At higher deposition temperatures (>200 °C), enhanced nucleation of crystals and the incorporation of carbon impurities lead to a reduced grain size and even an amorphous phase, respectively, resulting in a strong reduction in carrier mobility. APT studies on films grown with deuterated water show that the incorporated hydrogen mainly originates from the coreactant and not from the InCp precursor. In addition, it was established that the incorporation of hydrogen decreased from ∼4 atom % for amorphous growth to ∼2 atom % after the transition to crystal
lin
e film growth.
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