Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe2

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• 作者：Enze Zhang ; Rui Chen ; Ce Huang ; Jihai Yu ; Kaitai Zhang ; Weiyi Wang ; Shanshan Liu ; Jiwei Ling ; Xiangang Wan ; Hai-Zhou Lu ; Faxian Xiu
• 刊名：Nano Letters
• 出版年：2017
• 出版时间：February 8, 2017
• 年：2017
• 卷：17
• 期：2
• 页码：878-885
• 全文大小：604K
• ISSN：1530-6992

文摘

Transitional metal ditelluride WTe₂ has been extensively studied owing to its intriguing physical properties like nonsaturating positive magnetoresistance and being possibly a type-II Weyl semimetal. While surging research activities were devoted to the understanding of its bulk properties, it remains a substantial challenge to explore the pristine physics in atomically thin WTe₂. Here, we report a successful synthesis of mono- to few-layer WTe₂ via chemical vapor deposition. Using atomically thin WTe₂ nanosheets, we discover a previously inaccessible ambipolar behavior that enables the tunability of magnetoconductance of few-layer WTe₂ from weak antilocalization to weak localization, revealing a strong electrical field modulation of the spin–orbit interaction under perpendicular magnetic field. These appealing physical properties unveiled in this study clearly identify WTe₂ as a promising platform for exotic electronic and spintronic device applications.