Phenothiazine (PTZ) crystals are grown by a physical vapor transport method in a horizontal tube furnace. The resulting disk-type PTZ single crystals have a layered structure, which can be mechanically exfoliated into stacked individual layers to exhibit various colors depending on the thickness. The PTZ single-crystal field-effect transistor (FET) devices exhibit a p-type semiconducting property with 3.03 脳 10鈥? S/cm electrical conductivity, 1.15 脳 10鈥? cm2/(V s) carrier mobility, and a 104 on/off ratio.
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