设为首页
收藏本站
网站地图
|
English
|
公务邮箱
About the library
Background
History
Leadership
Organization
Readers' Guide
Opening Hours
Collections
Help Via Email
Publications
Electronic Information Resources
Correction to Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory Applications
详细信息
查看全文
作者:
Hao Zhu
;
Sujitra J. Pookpanratana
;
John E. Bonevich
;
Sean
N.
Natoli
;
Christina A. Hacker
;
Tong Ren
;
John S. Suehle
;
Curt A. Richter
;
Qiliang Li
刊名:ACS Applied Materials & Interfaces
出版年:2016
出版时间:August 3, 2016
年:2016
卷:8
期:30
页码:19842-19842
全文大小:125K
年卷期:0
ISSN:1944-8252
文摘
NGLC 2004-2010.National Geological Library of China All Rights Reserved.
Add:29 Xueyuan Rd,Haidian District,Beijing,PRC. Mail Add: 8324 mailbox 100083
For exchange or info please contact us via
email
.