Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2

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• 作者：Wei Chen ; Jing Zhao ; Jing Zhang ; Lin Gu ; Zhenzhong Yang ; Xiaomin Li ; Hua Yu ; Xuetao Zhu ; Rong Yang ; Dongxia Shi ; Xuechun Lin ; Jiandong Guo ; Xuedong Bai ; Guangyu Zhang
• 刊名：Journal of the American Chemical Society
• 出版年：2015
• 出版时间：December 23, 2015
• 年：2015
• 卷：137
• 期：50
• 页码：15632-15635
• 全文大小：356K
• ISSN：1520-5126

文摘

Monolayer molybdenum disulfide (MoS₂) has attracted great interest due to its potential applications in electronics and optoelectronics. Ideally, single-crystal growth over a large area is necessary to preserve its intrinsic figure of merit but is very challenging to achieve. Here, we report an oxygen-assisted chemical vapor deposition method for growth of single-crystal monolayer MoS₂. We found that the growth of MoS₂ domains can be greatly improved by introducing a small amount of oxygen into the growth environment. Triangular monolayer MoS₂ domains can be achieved with sizes up to ～350 μm and a room-temperature mobility up to ～90 cm²/(V·s) on SiO₂. The role of oxygen is not only to effectively prevent the poisoning of precursors but also to eliminate defects during the growth. Our work provides an advanced method for high-quality single-crystal monolayer MoS₂ growth.