Direct Evidence of Mg Incorporation Pathway in Vapor鈥揕iquid鈥揝olid Grown p-type Nonpolar GaN Nanowires

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• 作者：Avinash Patsha ; S. Amirthapandian ; Ramanathaswamy Pandian ; Santanu Bera ; Anirban Bhattacharya ; Sandip Dhara
• 刊名：Journal of Physical Chemistry C
• 出版年：2014
• 出版时间：October 16, 2014
• 年：2014
• 卷：118
• 期：41
• 页码：24165-24172
• 全文大小：555K
• ISSN：1932-7455

文摘

Doping of III鈥搉itride based compound semiconductor nanowires is still a challenging issue to have control over the dopant distribution in precise locations of the nanowire optoelectronic devices. Knowledge of the dopant incorporation and its pathways in nanowires for such devices is limited by the growth methods. We report the direct evidence of incorporation pathway for Mg dopants in p-type nonpolar GaN nanowires grown via vapor鈥搇iquid鈥搒olid (VLS) method in a chemical vapor deposition technique for the first time. Mg incorporation is confirmed using X-ray photoelectron (XPS) and electron energy loss spectroscopic (EELS) measurements. Energy filtered transmission electron microscopic (EFTEM) studies are used for finding the Mg incorporation pathway in the GaN nanowire. Photoluminescence studies on Mg doped GaN nanowires along with the electrical characterization on heterojunction formed between nanowires and n-Si confirm the activation of Mg atoms as p-type dopants in nonpolar GaN nanowires.