Formamide Mediated, Air-Brush Printable, Indium-Free Soluble Zn鈥揝n鈥揙 Semiconductors for Thin-Film Transistor Applications

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• 作者：Seong Jip Kim ; Hye-Ji Jeon ; Sang-Jin Oh ; Sun Sook Lee ; Youngmin Choi ; Jin-Seong Park ; Sunho Jeong
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2014
• 出版时间：November 12, 2014
• 年：2014
• 卷：6
• 期：21
• 页码：18429-18434
• 全文大小：311K
• ISSN：1944-8252

文摘

In this study, for high-performance indium-free metal oxide channel layer, we synthesize Zn鈥揝n鈥揙 (ZTO) precursor solutions in which formamide is incorporated as an additive for catalyzing the subsequent sol鈥揼el reactions and the evolution of chemical structure. It is revealed that the formamide plays a critical chemical role in evolving a chemical structure with more oxygen-deficient oxide lattice and with less hydroxide, allowing for high field-effect mobility over 7 cm²/V路s. Furthermore, it is for the first time demonstrated that electrically active metal-oxide films can be patterned, using an air-brush printing technique, by directly depositing formamide-mediated ZTO-precursor solutions in patterned geometries.

Keywords:

formamide; print; indium free; zinc tin oxide; semiconductor; transistor