Controllable p鈥搉 Switching Behaviors of GaAs Nanowires via an Interface Effect

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• 作者：Ning Han ; Fengyun Wang ; Jared J. Hou ; Fei Xiu ; SenPo Yip ; Alvin T. Hui ; TakFu Hung ; Johnny C. Ho
• 刊名：ACS Nano
• 出版年：2012
• 出版时间：May 22, 2012
• 年：2012
• 卷：6
• 期：5
• 页码：4428-4433
• 全文大小：373K
• 年卷期：v.6,no.5(May 22, 2012)
• ISSN：1936-086X

文摘

Due to the extraordinary large surface-to-volume ratio, surface effects on semiconductor nanowires have been extensively investigated in recent years for various technological applications. Here, we present a facile interface trapping approach to alter electronic transport properties of GaAs nanowires as a function of diameter utilizing the acceptor-like defect states located between the intrinsic nanowire and its amorphous native oxide shell. Using a nanowire field-effect transistor (FET) device structure, p- to n-channel switching behaviors have been achieved with increasing NW diameters. Interestingly, this oxide interface is shown to induce a space-charge layer penetrating deep into the thin nanowire to deplete all electrons, leading to inversion and thus p-type conduction as compared to the thick and intrinsically n-type GaAs NWs. More generally, all of these might also be applicable to other nanowire material systems with similar interface trapping effects; therefore, careful device design considerations are required for achieving the optimal nanowire device performances.

Keywords:

gallium arsenide (GaAs) nanowires; diameter-dependent; tunable electronic transport; p鈭抧 conduction switching; interface trapping effect