Programmable Resistive-Switch Nanowire Transistor Logic Circuits

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• 作者：Wooyoung Shim ; Jun Yao ; Charles M. Lieber
• 刊名：Nano Letters
• 出版年：2014
• 出版时间：September 10, 2014
• 年：2014
• 卷：14
• 期：9
• 页码：5430-5436
• 全文大小：375K
• ISSN：1530-6992

文摘

Programmable logic arrays (PLA) constitute a promising architecture for developing increasingly complex and functional circuits through nanocomputers from nanoscale building blocks. Here we report a novel one-dimensional PLA element that incorporates resistive switch gate structures on a semiconductor nanowire and show that multiple elements can be integrated to realize functional PLAs. In our PLA element, the gate coupling to the nanowire transistor can be modulated by the memory state of the resistive switch to yield programmable active (transistor) or inactive (resistor) states within a well-defined logic window. Multiple PLA nanowire elements were integrated and programmed to yield a working 2-to-4 demultiplexer with long-term retention. The well-defined, controllable logic window and long-term retention of our new one-dimensional PLA element provide a promising route for building increasingly complex circuits with nanoscale building blocks.

Keywords:

Nanoprocessor; nanocomputing; nanoelectronics; programmable logic arrays; crossbar arrays; memory