Transition Metal Adsorption Promotes Patterning and Doping of Graphene by Electron Irradiation

详细信息    查看全文

• 作者：Zhiguo Wang ; Xinyue Niu ; Qiulei Su ; Huiqiu Deng ; Zhijie Li ; Wangyu Hu ; Fei Gao
• 刊名：Journal of Physical Chemistry C
• 出版年：2013
• 出版时间：August 29, 2013
• 年：2013
• 卷：117
• 期：34
• 页码：17644-17649
• 全文大小：325K
• 年卷期：v.117,no.34(August 29, 2013)
• ISSN：1932-7455

文摘

We present an ab initio molecular dynamics study of the effect of transition metal (TM) adatoms (Sc鈥揨n) on the threshold displacement energy (TDE) of graphene. Our calculations predict that it is substantially easier to displace one of the carbon atoms near the adatoms. Substitutional TM atoms at carbon vacancies and Stone鈥揥ales defects are the main defect structures formed after irradiation in the TM adatoms鈥揼raphene systems. Defect can be formed at low energy electron irradiation (electron energy below 55 keV for the V, Cr, Mn, Fe, and Co adatoms). Thus, the absorption of TM atoms on graphene enables patterning the graphene by controlling deposition and electron irradiation, as well as graphene modification under transmission electron microscope condition. Also, the result provides an easy pathway to dope the graphene with TM substitutional atoms for the spin-electronic devices through electron-beam or ion-beam lighography.