Direct Growth of Single- and Few-Layer MoS2 on h-BN with Preferred Relative Rotation Angles

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• 作者：Aiming Yan ; Jairo Velasco ; Jr. ; Salman Kahn ; Kenji Watanabe ; Takashi Taniguchi ; Feng Wang ; Michael F. Crommie ; Alex Zettl
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：October 14, 2015
• 年：2015
• 卷：15
• 期：10
• 页码：6324-6331
• 全文大小：478K
• ISSN：1530-6992

文摘

Monolayer molybdenum disulfide (MoS₂) is a promising two-dimensional direct-bandgap semiconductor with potential applications in atomically thin and flexible electronics. An attractive insulating substrate or mate for MoS₂ (and related materials such as graphene) is hexagonal boron nitride (h-BN). Stacked heterostructures of MoS₂ and h-BN have been produced by manual transfer methods, but a more efficient and scalable assembly method is needed. Here we demonstrate the direct growth of single- and few-layer MoS₂ on h-BN by chemical vapor deposition (CVD) method, which is scalable with suitably structured substrates. The growth mechanisms for single-layer and few-layer samples are found to be distinct, and for single-layer samples low relative rotation angles (<5掳) between the MoS₂ and h-BN lattices prevail. Moreover, MoS₂ directly grown on h-BN maintains its intrinsic 1.89 eV bandgap. Our CVD synthesis method presents an important advancement toward controllable and scalable MoS₂-based electronic devices.