Steady-State Statistical Sputtering Model for Extracting Depth Profiles from Molecular Dynamics Simulations of Dynamic SIMS

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• 作者：Robert J. Paruch ; Zbigniew Postawa ; Andreas Wucher ; Barbara J. Garrison
• 刊名：The Journal of Physical Chemistry C
• 出版年：2012
• 出版时间：January 12, 2012
• 年：2012
• 卷：116
• 期：1
• 页码：1042-1051
• 全文大小：735K
• 年卷期：v.116,no.1(January 12, 2012)
• ISSN：1932-7455

文摘

Recently a 鈥渄ivide and conquer鈥?approach was developed to model by molecular dynamics (MD) simulations dynamic secondary ion mass spectrometry (SIMS) experiments in order to understand the important factors for depth profiling. Although root-mean-square (rms) roughness can be directly calculated from the simulations, calculating depth profiles is beyond the current capability of the MD simulations. The statistical sputtering model (SSM) of Krantzman and Wucher establishes the foundation for connecting information from the MD simulations to depth profiles. In this study, we revise the SSM to incorporate more extensive information from the MD simulations in the steady-state region, thus presenting the steady-state statistical sputtering model (SS-SSM). The revised model is utilized to interpret MD simulations of 20 keV C₆₀ bombardment of Ag at normal incidence as well as the effect of sample rotation on depth profiling.