Atomically Engineered Metal鈥揑nsulator Transition at the TiO2/LaAlO3 Heterointerface

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• 作者：Makoto Minohara ; Takashi Tachikawa ; Yasuo Nakanishi ; Yasuyuki Hikita ; Lena F. Kourkoutis ; Jun-Sik Lee ; Chi-Chang Kao ; Masahiro Yoshita ; Hidefumi Akiyama ; Christopher Bell ; Harold Y. Hwang
• 刊名：Nano Letters
• 出版年：2014
• 出版时间：November 12, 2014
• 年：2014
• 卷：14
• 期：11
• 页码：6743-6746
• 全文大小：319K
• ISSN：1530-6992

文摘

We demonstrate that the atomic boundary conditions of simple binary oxides can be used to impart dramatic changes of state. By changing the substrate surface termination of LaAlO₃ (001) from AlO₂ to LaO, the room-temperature sheet conductance of anatase TiO₂ films are increased by over 3 orders of magnitude, transforming the intrinsic insulating state to a high mobility metallic state, while maintaining excellent optical transparency.

Keywords:

Anatase TiO₂; heterointerfaces; termination layer switching; metal鈭抜nsulator transition