Carbon Nanotube Complementary Wrap-Gate Transistors

详细信息    查看全文

• 作者：Aaron D. Franklin ; Siyuranga O. Koswatta ; Damon B. Farmer ; Joshua T. Smith ; Lynne Gignac ; Chris M. Breslin ; Shu-Jen Han ; George S. Tulevski ; Hiroyuki Miyazoe ; Wilfried Haensch ; Jerry Tersoff
• 刊名：Nano Letters
• 出版年：2013
• 出版时间：June 12, 2013
• 年：2013
• 卷：13
• 期：6
• 页码：2490-2495
• 全文大小：422K
• 年卷期：v.13,no.6(June 12, 2013)
• ISSN：1530-6992

文摘

Among the challenges hindering the integration of carbon nanotube (CNT) transistors in digital technology are the lack of a scalable self-aligned gate and complementary n- and p-type devices. We report CNT transistors with self-aligned gates scaled down to 20 nm in the ideal gate-all-around geometry. Uniformity of the gate wrapping the nanotube channels is confirmed, and the process is shown not to damage the CNTs. Further, both n- and p-type transistors were realized by using the appropriate gate dielectric鈥擧fO₂ yielded n-type and Al₂O₃ yielded p-type鈥攚ith quantum simulations used to explore the impact of important device parameters on performance. These discoveries not only provide a promising platform for further research into gate-all-around CNT devices but also demonstrate that scalable digital switches with realistic technological potential can be achieved with carbon nanotubes.

Keywords:

Carbon nanotube; field-effect transistor; gate-all-around; wrap-gate; complementary logic; CNTFET