Sulfide Treatment of ZnO Single Crystals and Nanorods and the Effect on P3HT−ZnO Photovoltaic Device Properties

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• 作者：John J. Uhlrich ; Ryan Franking ; Robert J. Hamers ; Thomas F. Kuech
• 刊名：Journal of Physical Chemistry C
• 出版年：2009
• 出版时间：December 17, 2009
• 年：2009
• 卷：113
• 期：50
• 页码：21147-21154
• 全文大小：372K
• 年卷期：v.113,no.50(December 17, 2009)
• ISSN：1932-7455

文摘

Surface chemical changes or passivation can be used to enhance the electrical performance of device structures. The solution-based (NH₄)₂S_x treatment of ZnO single crystals of (0001), (100), and (000) orientations as well as ZnO nanorods was studied by using X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS). The (100) and (000)-oriented single crystals and ZnO nanorods each showed evidence that the ZnO was consumed, forming a ZnS layer at the surface. In contrast, the ZnO (0001) crystal did not substantially react with the sulfide solution. However, the surface hydroxyl species were displaced by a sulfide passivation layer of 0.21 ML. This process resulted in an apparent increase in upward band bending by 0.1−0.3 eV. P3HT−ZnO photovoltaic devices fabricated on O-polar single crystals showed electrical properties which can be correlated with ZnS formation due to the sulfide treatment.