Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface

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• 作者：Shengwei Zeng ; Weiming Lü ; Zhen Huang ; Zhiqi Liu ; Kun Han ; Kalon Gopinadhan ; Changjian Li ; Rui Guo ; Wenxiong Zhou ; Haijiao Harsan Ma ; Linke Jian ; Thirumalai Venkatesan ; Ariando
• 刊名：ACS Nano
• 出版年：2016
• 出版时间：April 26, 2016
• 年：2016
• 卷：10
• 期：4
• 页码：4532-4537
• 全文大小：400K
• 年卷期：0
• ISSN：1936-086X

文摘

Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here, we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO₃/SrTiO₃ (LAO/STO) interface through ionic liquid-assisted electric field effect. With a change of the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19 380 cm²/(V s) are realized, leading to quantum oscillations of the conductivity at the LAO/STO interface. The present results suggest that high-mobility oxide interfaces, which exhibit quantum phenomena, could be obtained by ionic liquid-assisted field effect.