Hole Carriers Doping Effect on the Metal鈥揑nsulator Transition of N-Incorporated Vanadium Dioxide Thin Films

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• 作者：Wenhua Zhang ; Kai Wang ; Lele Fan ; Lingyun Liu ; Panpan Guo ; Chongwen Zou ; Jiaou Wang ; Haijie Qian ; Kurash Ibrahim ; Wensheng Yan ; Faqiang Xu ; Ziyu Wu
• 刊名：Journal of Physical Chemistry C
• 出版年：2014
• 出版时间：June 19, 2014
• 年：2014
• 卷：118
• 期：24
• 页码：12837-12844
• 全文大小：446K
• 年卷期：v.118,no.24(June 19, 2014)
• ISSN：1932-7455

文摘

The coupling of doped charge carriers with the crystal lattice is an efficient route to modulate the phase transition behavior of VO₂. In the current work, the N-incorporated VO₂ samples are prepared through the low-energy N₂⁺ ion sputtering of the crystalline VO₂ films. The critical temperatures (T_c) of the metal鈥搃nsulator transition (MIT) process are observed to decrease with a value of 18 掳C for VO_1.9N_0.1 and VO_1.87N_0.13 samples. The effects of nitrogen incorporation on the MIT depression have been revealed by the electronic structural characterizations via the X-ray adsorption near-edge structure (XANES) spectroscopy and photon electronic spectroscopy (SRPES). The implanted nitrogen atoms are identified to coordinate with the V⁴⁺ ions at the substituent position of oxygen atoms. The p-type dopant provides the hole carriers into the d sub-bands, resulting in the attenuation of the interaction within V鈥揤 dimer and the narrowing of the energy band gap in M1 phase. Both aspects unanimously facilitate the depression of the MIT temperature in N-incorporated VO₂.