SESAM fabrication errors and its influence on ultrafast laser cavity design

详细信息    查看全文

• 作者：Sha Wang (1)
  Guo-ying Feng (1)
  Shou-huan Zhou (1) (2)
  
  1. Institute of Laser & Micro/Nano Engineering ; College of Electronics and Information Engineering ; Sichuan University ; Chengdu ; 610064 ; China
  2. North China Research Institute of Electro-Optics ; Beijing ; 100015 ; China
  
• 关键词：Semiconductor saturable absorber mirror (SESAM) ; Ultrafast laser ; Fabrication error ; Design criteria ; TN248.1 ; 鍙ケ鍜屽惛鏀堕暅 ; 椋炵婵€鍏夊櫒 ; 鍒堕€犺宸?/li> 鑵斿瀷 璁捐
• 刊名：Journal of Zhejiang University - Science A
• 出版年：2015
• 出版时间：April 2015
• 年：2015
• 卷：16
• 期：4
• 页码：326-334
• 全文大小：991 KB
• 参考文献：1. Honninger, C, Paschotta, R, Morier-Genoud, F (1999) Q-switching stability limits of continuous-wave passive mode-locking. Journal of the Optical Society of America B 16: pp. 46-56 CrossRef
  2. Kartner, FX, Keller, U (1995) Stabilization of soliton like pulses with a slow saturable absorber. Optics Letters 20: pp. 16-18 CrossRef
  3. Kartner, FX, Brovelli, LR, Kopf, D (1995) Control of solid state laser dynamics by semiconductor devices. Optical Engineering 34: pp. 2024-2036 CrossRef
  4. Kartner, FX, Jung, I, Keller, U (1996) Soliton mode-locking with saturable absorbers. IEEE Journal of Selected Topics in Quantum Electronics 2: pp. 540-556 CrossRef
  5. Keller, U (1994) Ultrafast all-solid-state laser technology. Applied Physics B 58: pp. 347-363 CrossRef
  6. Keller, U, Miller, DAB, Boyd, GD (1992) Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an antiresonant semiconductor Fabry-Perot saturable absorber. Optics Letters 17: pp. 505-507 CrossRef
  7. Keller, U, Chiu, TH, Ferguson, JF (1993) Self-starting femtosecond mode-locked Nd: glass laser using intracavity saturable absorbers. Optics Letters 18: pp. 1077-1097 CrossRef
  8. Keller, U, Weingarten, KJ, Franz, X (1996) Semiconductor saturable absorber mirrors (SESAM鈥檚) for femtosecond to nanosecond pulse generation in solid-state lasers. IEEE Journal of Selected Topics in Quantum Electronics 2: pp. 435-453 CrossRef
  9. Kubecek, V, Dombrovsky, A, Biegert, J (2001) Mode-locking of flash lamp pumped Nd:YAP laser using solid state saturable absorbers. Proc. SPIE 4267, Solid State Lasers X, San Jose, CA. pp. 128-133
  10. Malyarevich, AM, Denisov, IA, Yumashev, KV (1998) V:YAG-a new passive Q-switch for diode-pumped solid-state lasers. Applied Physics B: Lasers and Optics 67: pp. 555-558 CrossRef
  11. Mollenauer, LF, Stolen, RH (1984) The soliton laser. Optics Letters 9: pp. 13-15 CrossRef
  12. Rudin, B, Wittwer, VJ, Maas, DJHC (2010) High-power MIXSEL: an integrated ultrafast semiconductor laser with 6. W average power. Optics Express 18: pp. 27582-27588 CrossRef
  13. Saraceno, CJ (2012) Cutting-edge High-power Ultrafast Oscillators: Pushing the Limits of SESAM Modelocked Thin-disk Lasers.
  14. Spuhler, GJ, Weingarten, KJ, Grange, R (2005) Semiconductor saturable absorber mirror structures with low saturation fluence. Applied Physics B 81: pp. 27-32 CrossRef
  15. Sulc, J, Jelinkova, H, Nemec, M (2004) V:YAG saturable absorber for flash lamp and diode pumped solid state lasers. Proc. SPIE 5460, Solid State Lasers and Amplifiers, Strasbourg, France. pp. 292-302
  16. Sullivan, BT, Dobrowolski, JA (1992) Deposition errorcompensation for optical multilayer coatings. I. Theoretical description. Applied Optics 31: pp. 3821-3835 CrossRef
  17. Tikhonravov, AV, Trubetskov, MK, Amotchkina, TV (2006) Investigation of the effect of accumulation of thickness errors in optical coating production by broadband optical monitoring. Applied Optics 45: pp. 7026-7034 CrossRef
  
• 刊物类别：Engineering
• 刊物主题：Physics
  Mechanics, Fluids and Thermodynamics
  Chinese Library of Science
  
• 出版者：Zhejiang University Press, co-published with Springer
• ISSN：1862-1775

文摘

During mode-locked ultrafast laser experiments, we find that semiconductor saturable absorber mirrors (SESAMs) from the same manufacturing process may, from batch to batch, show different working ranges: pure Q-switching, Q-switched mode-locking, and continuous wave (CW) mode-locking. This is because, in high-volume wafer-scale fabrication, there is typically an estimated 1% error for high-quality molecular beam epitaxy (MBE) growth, which introduces a variation in the parameters of an individual SESAM. In this paper, we will analyze how that 1% error in layer thickness influences the behaviour of SESAMs in three different structures: resonant SESAM, anti-resonant SESAM, and enhanced SESAM. Furthermore, the characteristics of the SESAM will affect the mode-locking dynamic behavior of ultrafast solid state lasers. In the worst case, a SESAM with a fabrication error may prevent the laser cavity from mode-locking. Proper laser cavity design can help to reduce the impact of SESAM fabrication errors on laser performance and maintain the laser in the CW mode-locking range.