Microtron Irradiation Induced Tuning of Band Gap and Photoresponse of Al-ZnO Thin Films Synthesized by mSILAR

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• 作者：Deepu Thomas ; Simon Augustine ; Kishor Kumar Sadasivuni…
• 关键词：mSILAR ; doping ; photoconductivity ; band gap ; solar cell
• 刊名：Journal of Electronic Materials
• 出版年：2016
• 出版时间：October 2016
• 年：2016
• 卷：45
• 期：10
• 页码：4847-4853
• 全文大小：1,176 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X
• 卷排序：45

文摘

Al-doped polycrystalline nano ZnO (Al-ZnO) thin films with different doping concentrations were successfully prepared by the microwave-assisted successive ionic layer adsorption and reaction (mSILAR) technique. The structural analysis along with the orientation of the prepared films was examined by powder x-ray diffraction (PXRD) patterns. The deposited film is polycrystalline and the (002) orientation enhanced upon doping. Additional investigations were carried out to study the effect of electron beam irradiation (e−-irradiation) on the band gap and photoconductivity of both irradiated and unirradiated samples. Both the Al doping and e−-irradiation led to the enhancement of the photoconductivity of prepared materials. This property enables us to tune the properties of materials for various applications by controlling dopant concentrations and e−-irradiation. The dependence of photocurrent on e−-irradiation of Al-ZnO thin films was not reported previously. Therefore, Al-doped polycrystalline nano-ZnO thin film is a promising material for band gap engineering and for the development of solar cells.