Proton implantation effect on CdSe nanowires

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• 作者：Chetna Narula ; R. P. Chauhan
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：28
• 期：4
• 页码：3175-3184
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials;
• 出版者：Springer US
• ISSN：1573-482X
• 卷排序：28

文摘

Semiconducting nanowires represent an exclusive system for analyzing phenomena at the nanoscale and are also believed to play an important role in future nanoscale electronic and optoelectronic devices. The one dimensional nanostructures bring about significant alterations in their properties on implantation; depending on the energy, dose and fluence of the bombarding ions. In this view, effects of implantation with 250 keV protons on structural, optical and electrical properties of CdSe nanowires of 80 nm were studied for different fluencies. Implantation led to substantial change in the electrical conductivity at various fluencies as compared to pristine which may be attributed to the ionization effects. A drop in conductivity value above fluence of 1012 ions/cm2 may be ascribed to the passivation of some donor levels due to the presence of hydrogen. The optical band gap was also found to vary with implantation. This study opens up new avenues for research to modulate opto-electronic properties of CdSe nanowires for the novel device applications.