Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs

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• 作者：Yao-Hong You (1)
  Vin-Cent Su (1)
  Ti-En Ho (2)
  Bo-Wen Lin (3)
  Ming-Lun Lee (1)
  Atanu Das (2)
  Wen-Ching Hsu (4)
  Chieh-Hsiung Kuan (1)
  Ray-Ming Lin (2)
  
  1. Graduate Institute of Electronic Engineering and Department of Electrical Engineering ; National Taiwan University ; No. 1 ; Roosevelt Road Section 4 ; Daan District ; Taipei ; 10617 ; Taiwan
  2. Graduate Institute of Electronic Engineering and Green Technology Research Center ; Chang Gung University ; 259 Wen-Hwa 1st Road ; Kwei-Shan ; Tao-Yuan ; 333 ; Taiwan
  3. Department of Materials Science and Engineering ; National Chiao Tung University ; No. 1001 ; Daxue Road ; East District ; Hsinchu ; 300 ; Taiwan
  4. Sino-American Silicon Products Incorporated ; No. 8 ; Industrial East Road 2 ; Science-Based Industrial Park ; Hsinchu ; 300 ; Taiwan
  
• 关键词：Light ; emitting diodes ; GaN ; Patterned sapphire substrates ; Quantum ; confined Stark effect
• 刊名：Nanoscale Research Letters
• 出版年：2014
• 出版时间：December 2014
• 年：2014
• 卷：9
• 期：1
• 全文大小：1,636 KB
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• 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
• 出版者：Springer US
• ISSN：1556-276X

文摘

This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the ones grown on the square lattice arrangement PSS (SLAPSS). The quantum-confined Stark effect (QCSE) is also affected by the residual compressive strain. Based on the experimentally measured data and the ray tracing simulation results, the InGaN-based LED with the HLAPSS has a higher LOP than the one with the SLAPSS due to the weaker QCSE within multiple-quantum wells (MQWs).