Influences of hetero-junction buffer layers and substrates on polarity of PA-MBE grown InN films

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• 作者：Jenn-Chyuan Fan (1)
  Yun-Yo Lo (2)
  Man-Fang Huang (2)
  Wei-Chi Chen (2)
  Chien-Chen Liu (2)
  C. M. Lee (2)
  Yu-Chia Chiang (2)
  
  1. Department of Electronic Engineering ; Nan Kai University of Technology ; Nantou ; Taiwan
  2. Institute of Photonics ; National Changhua University of Education ; Changhua ; Taiwan
  
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2015
• 出版时间：April 2015
• 年：2015
• 卷：26
• 期：4
• 页码：2480-2485
• 全文大小：1,551 KB
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• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1573-482X

文摘

The polarity of InN films, grown on either GaN templates or sapphire substrates without and with various types of buffer layers using plasma-assisted molecular beam epitaxy, was investigated. From experimental results, we found that the polarity of InN films did not follow the polarity of GaN templates or GaN buffer layers and had different polarity behavior compared with PA-MBE grown GaN film. For InN films grown on Ga-polarity GaN template, they had N polarity either with or without GaN buffer layer. For InN films grown on high temperature annealed GaN buffer layer, they have In polarity due to lack of N-polarity nucleation sites. Similar results were found for InN films grown on sapphire substrates. We conclude that the polarity of InN film is independent on substrates but determined by growth nature, material characteristics of InN, and condition of heat treatment taken on buffer layers.