文摘
ZnS:Mn thin films were grown by chemical bath deposition technique on glass substrates for different doping ratios y = [Mn2+]/[Zn2+] (y = 0, 6, 12 and 18 at. %). Structural, morphological, optical and electrical properties were studied by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), UV–Vis–NIR spectrophotometry, spectrofluorimetry, Hall effect measurement. In fact, the XRD analysis showed that ZnS:Mn films were poorly crystalline. The average transmittance of all films was greater than 70 % in the visible range. The effect of Mn doping on refractive index, extinction coefficient and other optical parameters was also investigated. Measured electrical resistivity decreased slightly from 7.586 × 104 to 6.819 × 104 Ω cm with increasing of doping concentration from 0 to 6 at. % then it increased again to achieve 16.73 × 104 Ω cm for \(y\) equals to 18 at. %.
