Preparation and characterization of In0.82Ga0.18As PIN photodetectors

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• 作者：Xia Liu 刘霞 ; Lian-zhen Cao 曹连振 ; Huai-xin Lu 逯怀新 ; Ying-de Li 李英德…
• 刊名：Optoelectronics Letters
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：12
• 期：1
• 页码：8-11
• 全文大小：478 KB
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• 作者单位：Xia Liu 刘霞 (1) (2)
  Lian-zhen Cao 曹连振 (1) (2)
  Huai-xin Lu 逯怀新 (1)
  Ying-de Li 李英德 (1)
  Hang Song 宋航 (2)
  Hong Jiang 蒋红 (2)
  
  1. Shandong Provincial Key Laboratory of Multi-photon Entanglement and Manipulation, Department of Physics and Optoelectronic Engineering, Weifang University, Weifang, 261061, China
  2. Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Applied Optics, Optoelectronics and Optical Devices
  Chinese Library of Science
  
• 出版者：Tianjin University of Technology, co-published with Springer-Verlag GmbH
• ISSN：1993-5013

文摘

Using two-step growth method and buffer layer annealing treatment, the double heterojunction structures of In_0.82Ga_0.18As epilayer capped with InAs_0.6P_0.4 layer were prepared on InP substrate by low pressure metal organic chemical vapor deposition (LP-MOCVD). Based on the high quality In_0.82Ga_0.18As structures, the In_0.82Ga_0.18As PIN photodetector with cut-off wavelength of 2.56 μm at room temperature was fabricated by planar semiconductor technology, and the device performance was investigated in detail. The typical dark current at the reverse bias V _R=10 mV and the resistance area product R ₀ A are 5.02 μA and 0.29 Ω·cm2 at 296 K and 5.98 nA and 405.2 Ω·cm2 at 116 K, respectively. The calculated peak detectivities of the In_0.82Ga_0.18As photodetector are 1.21×1010 cm·Hz1/2/W at 296 K and 4.39×1011 cm·Hz1/2/W at 116 K respectively, where the quantum efficiency η=0.7 at peak wavelength is supposed. The results show that the detection performance of In_0.82Ga_0.18As prepared by two-step growth method can be improved greatly. This work has been supported by the National Natural Science Foundation of China (Nos.11174224 and 11404246), the Natural Science Foundation of Shandong Province (Nos.BS2015DX015 and ZR2013FM001), the Science and Technology Development Program of Shandong Province (No.2013YD01016), and the Higher School Science and Technology Program of Shandong Province (Nos.J13LJ54 and J15LJ54).