Investigations of the Defect Structures and g Factors for SnO2:Cr5+, SnO2:V4+, and TiO _{详细信息    查看全文}

• 作者：Lianxuan Zhu ; Minjie Wang
• 刊名：Applied Magnetic Resonance
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：47
• 期：3
• 页码：247-253
• 全文大小：364 KB
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• 作者单位：Lianxuan Zhu (1)
  Minjie Wang (1)
  
  1. School of Sciences, College of Sciences, Henan Agricultural University, NO. 95 Wenhua Road, Zhengzhou City, 450002, Henan Province, China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Analytical Chemistry
  
• 出版者：Springer Wien
• ISSN：1613-7507

文摘

The electron paramagnetic resonance (EPR) g factor formulas for SnO₂:Cr5+, SnO₂:V4+ and TiO₂:V4+ crystals are deduced from Jahn–Teller effect and contributions of the charge-transfer levels. The tetragonal distortions ΔR = −0.0283, −0.0091, and −0.0045 nm, and Δθ = 0°, −0.0335°, and −0.0010°, for SnO₂:Cr5+, SnO₂:V4+ and TiO₂:V4+, respectively. The calculations of the g factors agree well with the experimental values. The contributions of the charge-transfer levels to g factors increase with the increasing valence state. It must be taken into account in the precise calculations of g factors for the high-valence state d 1 ions in crystals.