Low Energy Signal Processing Techniques for Reliability Improvement of High-Density NAND Flash Memory

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• 作者：Dong-hwan Lee (1)
  Jonghong Kim (1)
  Wonyong Sung (1)
  
  1. Department of Electrical and Computer Engineering ; Seoul National University ; Gwanak-gu ; Seoul ; 151-744 ; Korea
  
• 关键词：NAND flash memory ; Signal processing ; Threshold voltage distribution ; Cell ; to ; cell interference ; Error correction
• 刊名：The Journal of VLSI Signal Processing
• 出版年：2015
• 出版时间：January 2015
• 年：2015
• 卷：78
• 期：1
• 页码：63-71
• 全文大小：2,519 KB
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• 刊物类别：Engineering
• 刊物主题：Electrical Engineering
  Circuits and Systems
  Computer Imaging, Vision, Pattern Recognition and Graphics
  Computer Systems Organization and Communication Networks
  Signal,Image and Speech Processing
  Mathematics of Computing
  
• 出版者：Springer New York
• ISSN：1939-8115

文摘

High density NAND flash memory employs very fine process technology, such as sub-20 nm process, and multi-level cell data coding. The reduced feature size not only lowers the number of electrons stored at each floating-gate but also increases the cell-to-cell interference (CCI). As a result, the reliability of NAND flash memory has become an important issue that cannot be well solved by only advancing the process technology. In this paper, we present signal processing and error correction techniques that can overcome the reliability problem while minimizing the energy consumption. These techniques include efficient estimation of the threshold voltage distribution, CCI cancellation aware soft-information computation, and low-energy soft-decision error correction. We also include experimental results for the presented techniques.