V-pits as Barriers to Diffusion of Carriers in InGaN/GaN Quantum Wells

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• 作者：Mi-Hyang Sheen ; Sung-Dae Kim ; Jong-Hwan Lee…
• 关键词：GaN ; V ; pit ; dislocation ; cathodoluminescence ; transmission electron microscopy
• 刊名：Journal of Electronic Materials
• 出版年：2015
• 出版时间：November 2015
• 年：2015
• 卷：44
• 期：11
• 页码：4134-4138
• 全文大小：1,463 KB
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• 作者单位：Mi-Hyang Sheen (1)
  Sung-Dae Kim (1)
  Jong-Hwan Lee (1)
  Jong-In Shim (2)
  Young-Woon Kim (1)
  
  1. Research Institute of Advanced Materials, Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 151-744, Republic of Korea
  2. Department of Electronics and Communication Engineering, Hanyang University, Ansan, 426-791, Republic of Korea
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

The luminescence characteristics of V-pits in InGaN/GaN quantum wells (QW) correlated directly with the microstructure of the V-pits, as studied by use of transmission electron microscopy with cathodoluminescence. {10-11}-Faceted V-pits, formed in the QW, produce more intense blue-shifted emission than {0001}-plane QW. A dead emission center seems to be present at the corner of the V-pit which connects the R-plane and C-plane QW. High-resolution transmission electron microscopy revealed formation of indium-deficient QW at the corners of the V-pits. High potential barriers occur because of the lack of indium around the hexagonal V-pit; this effectively blocks diffusion of carriers into the threading dislocations known to be non-radiative recombination centers. V-pits thus have promise for improving the internal quantum efficiency of light-emitting diodes. Keywords GaN V-pit dislocation cathodoluminescence transmission electron microscopy