THz photomixer with milled nanoelectrodes on LT-GaAs

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• 作者：Gediminas Seniutinas ; Gediminas Gervinskas ; Evan Constable…
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2014
• 出版时间：November 2014
• 年：2014
• 卷：117
• 期：2
• 页码：439-444
• 全文大小：2,002 KB
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• 作者单位：Gediminas Seniutinas (1) (2)
  Gediminas Gervinskas (1) (2)
  Evan Constable (3)
  Arūnas Krotkus (4)
  Gediminas Molis (5)
  Gintaras Valu?is (4)
  Roger A. Lewis (3)
  Saulius Juodkazis (1) (2)
  
  1. Centre for Micro-Photonics, Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
  2. Melbourne Centre for Nanofabrication, Australian National Fabrication Facility, Clayton, VIC, 3168, Australia
  3. Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, NSW, 2522, Australia
  4. Center for Physical Sciences and Technology, Vilnius, 01108, Lithuania
  5. Teravil Ltd, Vilnius, 01108, Lithuania
  
• ISSN：1432-0630

文摘

A terahertz (THz) photomixer: (i) a meander type antenna with integrated nanoelectrodes on (ii) a low temperature grown GaAs has been fabricated and characterized. It was designed for spectral range of 0.3-.4?THz where molecular fingerprinting and sensing are performed. By combination of electron beam lithography with post-processing using focused ion beam (FIB), milling the THz emitter was successfully fabricated. Nanogaps as small as 40?nm width in the active area of photomixer were milled by FIB. Nanocontacts enhance electric fields of the illuminated and THz radiation and contribute to a better collection of photo-electrons. THz emission was obtained and spectrally characterized.