Junction characteristics of ITO/PANI-ZnS/Ag and ITO/PANI-CdS/Ag Schottky diodes: a comparative study

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• 作者：S. K. Dey ; S. Baglari ; D. Sarkar
• 关键词：Polyaniline ; Zinc sulphide ; Cadmium sulphide ; Nanocomposite ; Schottky diode ; 73.61. Ph ; 73.61. Ga ; 78.67. Sc
• 刊名：Indian Journal of Physics
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：90
• 期：1
• 页码：29-34
• 全文大小：550 KB
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• 作者单位：S. K. Dey (1)
  S. Baglari (1)
  D. Sarkar (1)
  
  1. Department of Physics, Gauhati University, Guwahati, 781014, Assam, India
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Astronomy
  Astronomy, Astrophysics and Cosmology
  Physics
  
• 出版者：Springer India
• ISSN：0974-9845

文摘

Schottky junctions are constructed by depositing PANI-ZnS and PANI-CdS nanocomposite thin films on ITO electrodes. Current–voltage (I–V) measurements of these systems are performed as a function of temperature in the range of 313–363 K. These junctions show Schottky diode nature. Various parameters, such as saturation current (I ₀), ideality factor (n), barrier height (∅ ₀) and series resistance (R _S), are calculated from diode characteristics relations. These parameters show strong temperature dependence. The values of I ₀ and ∅ increase with increasing temperature, whereas the values of n and R _S show decreasing trend. A Richardson plot of the data shows nonlinear behaviour with Richardson constant ~76 and 45 A cm−2 K−2 for PANI-ZnS and PANI-CdS nanocomposite thin films, respectively. Keywords Polyaniline Zinc sulphide Cadmium sulphide Nanocomposite Schottky diode