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Barrier modification of Au/n-GaAs Schottky structure by organic interlayer
- 作者：A. Bobby ; N. Shiwakoti ; P. S. Gupta ; B. K. Antony
- 关键词：Au/n ; GaAs ; Schottky contacts ; Interface modification ; Organic interlayer ; 73.30. + y ; 73.40. ; c ; 73.40.Qv ; 73.50.Gr ; 68.08. ; p
- 刊名：Indian Journal of Physics
- 出版年：2016
- 出版时间：March 2016
- 年：2016
- 卷：90
- 期：3
- 页码：307-312
- 全文大小：1,114 KB
- 参考文献：[1]J W P Hsu, D V Lang, K W West, Y L Loo, M D Halls and K Raghavachari J. Phys. Chem. B. 109 5719 (2005)CrossRef
[2]İ Taşçıoğlu, U Aydemir, Ş Altındal, B Kınacı and S Özçelik, J. Appl. Phys. 109 054502 (2011)ADS CrossRef
[3]S F Bent J. Phys. Chem. B. 106 2830 (2002)CrossRef
[4]A Vilan, A Shanzer and D Cahen Nature 404 166 (2000)ADS CrossRef
[5]F Mustafa, N Parimon, A M Hashim, S F A Rahman, A R A Rahman and M N Osman Superlattices and Microstruct. 47 274 (2010)ADS CrossRef
[6]M Hudait, P Venkateswarlu and S B Krupanidhi Solid State Electron. 45 133 (2001)ADS CrossRef
[7]H Blauvelt, G Thurmond, J Parsons, D Lewis and H Yen Appl. Phys. Lett. 45 195 (1984)ADS CrossRef
[8]E S Aydil and R A Gottscho Mater. Sci. Forum. 159 148 (1994)
[9]C J Sandroff, R N Nottenberg, J C Bischoff and R Bhat Appl. Phys. Lett. 51 33 (1987)ADS CrossRef
[10]S Alialy, H Tecimer, H Uslu and Ş Altındal J. Nanomed. Nanotechol. 4 167 (2013)CrossRef
[11]O Gullu, S Aydogan and A Turut Microelectron. Eng. 85 1647 (2008)CrossRef
[12]M Sharma and S K Tripathi J. Appl. Phys. 112 024521 (2012)ADS CrossRef
[13]İ Taşçıoğlu, U Aydemir and Ş Altındal J. Appl. Phys. 108 064506 (2010)ADS CrossRef
[14]M Çakar, N Yıldırım, Ş Karataş, C Temirci and A Türüt J. Appl. Phys. 100 074505 (2006)ADS CrossRef
[15]M E Aydin, T Kilicoglu, K Akkilic and H Hosgoren Phys. B. 381 113 (2006)ADS CrossRef
[16]S N Mohammad J. Appl. Phys. 97 063703 (2005)ADS CrossRef
[17]D R T Zahn, T U Kampen and H Mendez Appl. Surf. Sci. 212 423 (2003)ADS CrossRef
[18]S Park, T U Kampen, W Braun and D R T Zahn Appl. Surf. Sci. 175 249 (2001)ADS CrossRef
[19]G Cabailh, J W Wells, I T McGovern, A R Vearey-Roberts, A Bushell and D A Evans Appl. Surf. Sci. 234 144 (2004)ADS CrossRef
[20]O Vural, N Yıldırım, S Altındal and A Turut Synth. Metals. 157 679 (2007)CrossRef
[21]G Gavrila, H Mendez, T U Kampen and D R T Zahn Appl. Surf. Sci. 234 126 (2004)ADS CrossRef
[22]T U Kampen, S Park and D R T Zahn J. Vac. Sci. Technol. B 21 879 (2003)CrossRef
[23]Y J Liu and H Z Yu Chemphys. Chem. 9 799 (2002)CrossRef
[24]A R Vearey-Roberts and D A Evans Appl. Phys. Lett. 86 072105 (2005)ADS CrossRef
[25]S M Sze and K. K. Ng, 3rd edn. (John Wiley and Sons Inc., Hoboken, New Jersey) (2007)
[26]D Donoval et al. J. Appl. Phys. 109 063711 (2011)ADS CrossRef
[27]M Hudait, S B Krupanidhi Solid State Electronics 44 1089 (2000)ADS CrossRef
[28]E H Rhoderick and R H Williams Metal–Semiconductor Contacts, 2nd edn. (Oxford: Clarendon) (1988)
[29]S K Cheung and N W Cheung, Appl. Phys. Lett. 49 85 (1986)ADS CrossRef
[30]J M Achamma, K D Patel and R Srivastava, Thin Solid Films 518 2695 (2010)ADS CrossRef
[31]J M Achamma IEEE Trans. Electron. Devices 58 4283 (2011)CrossRef
[32]M Missous and E H Rhoderick Electron. Lett. 22 477 (1986)CrossRef
[33]J Singh Physics of Semiconductors and Their Heterostructures (Mcgraw Hill Series in Electrical and Computer Engineering) (Mc-Graw Hill, New York) (1993)
[34]Y J Lin Appl. Phys. Lett. 92 046101 (2008)ADS CrossRef
[35]H Ishii, K Sugiyama, E Ito and K Seki Adv. Mater. 11 605 (1999)CrossRef
[36]S Y Kim and J L Lee Appl. Phys. Lett. 87 232105 (2005)ADS CrossRef
[37]T Kampen Appl. Phys. A Mater. Sci. Process. 82 457 (2006)ADS CrossRef
- 作者单位：A. Bobby (1)
N. Shiwakoti (1)
P. S. Gupta (1)
B. K. Antony (1)
1. Department of Applied Physics, Indian School of Mines, Dhanbad, 826004, India
- 刊物类别：Physics and Astronomy
- 刊物主题：Physics
Astronomy
Astronomy, Astrophysics and Cosmology
Physics
- 出版者：Springer India
- ISSN：0974-9845
文摘
Schottky contacts of Au/n-GaAs diodes with and without organic interlayer were fabricated. The room-temperature I–V and C–V characteristics were analyzed in both forward and reverse bias conditions. The forward current followed thermionic emission, whereas the reverse current followed tunneling mechanism. The barrier height of the modified structure revealed an enhancement due to organic interlayer compared to the pure diode. The increment was explained on the basis of organic interlayer-induced dipole at the interface. The modification was also found to passivate the GaAs surface and reduce the reverse leakage current. Keywords Au/n-GaAs Schottky contacts Interface modification Organic interlayer
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