Transport mechanisms and interface properties of W/p-InP Schottky diode at room temperature
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  • 作者：D. Sri Silpa ; P. Sreehith ; V. Rajagopal Reddy ; V. Janardhanam
  • 关键词：p ; InP ; Schottky contacts ; Electrical properties ; Current conduction mechanisms ; Interface state density
  • 刊名：Indian Journal of Physics
  • 出版年：2016
  • 出版时间：April 2016
  • 年：2016
  • 卷：90
  • 期：4
  • 页码：399-406
  • 全文大小：1,423 KB
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  • 作者单位：D. Sri Silpa (1)
    P. Sreehith (2)
    V. Rajagopal Reddy (1)
    V. Janardhanam (3)

    1. Department of Physics, Sri Venkateswara University, Tirupati, 517 502, India
    2. Department of Electronics and Communication Engineering, Amrita Viswa Vidyapeetham, Bengaluru, India
    3. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, 561-756, Republic of Korea
  • 刊物类别：Physics and Astronomy
  • 刊物主题：Physics
    Astronomy
    Astronomy, Astrophysics and Cosmology
    Physics
  • 出版者：Springer India
  • ISSN：0974-9845
文摘
We have investigated the electrical properties and current transport mechanisms of W/p-InP Schottky diode using current–voltage (I–V), capacitance–voltage–frequency (C–V–f) and conductance–frequency (G–f) techniques at room temperature. The W/p-InP Schottky diode exhibits a good rectifying behavior. Measurements show that the Schottky barrier height (SBH) and ideality factor of the W/p-InP Schottky diode are 0.84 eV (I–V)/0.98 eV (C–V) and 1.24, respectively. Also, the SBH and series resistance R s of the diode are extracted by Cheung’s functions and the values are in good agreement with each other. Ohmic and space charge-limited conduction mechanisms are found to govern the current flow in the W/p-InP Schottky diode at low and high forward bias conditions, respectively. Experimental results reveal that the Poole–Frenkel mechanism is found to be dominant in the reverse bias region of W/p-InP Schottky diode. Further, the interface state density N ss and their relaxation times τ of the W/p-InP Schottky diode are estimated from the forward bias C–f and G–f characteristics and the values are in the range from 1.95 × 1013 eV−1 cm−2 and 3.38 × 10−5 s at (0.81-E V ) eV to 1.78 × 1013 eV−1 cm−2 and 2.78 × 10−6 s at (0.30-E V ) eV, respectively. Both the N ss and τ show an exponential rise with bias from the top of the valance band toward the mid gap.
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