Correct extraction of frequency dispersion in accumulation capacitance in InGaAs metal-insulator-semiconductor devices

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• 作者：Woo Chul Lee ; Cheol Jin Cho ; Jung-Hae Choi ; Jin Dong Song…
• 关键词：InGaAs ; frequency ; dispersion ; MOS capacitors ; parasitic inductance
• 刊名：Electronic Materials Letters
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：12
• 期：6
• 页码：768-772
• 全文大小：703 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Condensed Matter Physics
  Electronics, Microelectronics and Instrumentation
  Optical and Electronic Materials
  Thermodynamics
  Characterization and Evaluation of Materials
  
• 出版者：The Korean Institute of Metals and Materials, co-published with Springer Netherlands
• ISSN：2093-6788
• 卷排序：12

文摘

The anomalous frequency dispersion of the accumulation capacitance, i.e. an increase in the accumulation capacitance at high frequencies, of Pt/Al₂O₃/InGaAs metal-oxide-semiconductor (MOS) capacitors was investigated in this study. The anomalous frequency dispersion can be attributed to the considerable effects of parasitic inductance at high frequencies. The effects of parasitic inductance were effectively suppressed by decreasing the capacitor area without changing the MOS structure. This suggests that a smaller capacitor area should be used to precisely characterize the capacitance-voltage behavior of InGaAs-based MOS devices.