Nanoscale Conductive Channels in Silicon Whiskers with Nickel Impurity

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• 作者：Serhii Yatsukhnenko ; Anatoly Druzhinin ; Igor Ostrovskii…
• 关键词：Whiskers ; Magnetoresistance ; Impurity ; Clusters ; Polaron
• 刊名：Nanoscale Research Letters
• 出版年：2017
• 出版时间：December 2017
• 年：2017
• 卷：12
• 期：1
• 全文大小：1283KB
• 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
• 出版者：Springer US
• ISSN：1556-276X
• 卷排序：12

文摘

The magnetization and magnetoresistance of Si whiskers doped with <Ni, B> to boron concentrations corresponding to the metal-insulator transition (2 × 1018 cm−3 ÷ 5 × 1018 cm−3) were measured at high magnetic fields up to 14 T in a wide temperature range 4.2–300 K. Hysteresis of the magnetic moment was observed for Si p-type whiskers with nickel impurity in a wide temperature range 4.2–300 K indicating a strong interaction between the Ni impurities and the possibility of a magnetic cluster creation. The introduction of Ni impurity in Si whiskers leads to appearance and increase of the magnitude of negative magnetoresistance up to 10% as well as to the decrease of the whisker resistivity in the range of hopping conductance at low temperatures. The abovementioned effects were explained in the framework of appearance of magnetic polarons leading to modification of the conductive channels in the subsurface layers of the whiskers.