Post cleaning effects on silicon nanowires grown by electroless etching

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• 作者：Victor H. Velez ; Kalpathy B. Sundaram
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：27
• 期：11
• 页码：12247-12250
• 全文大小：1,381 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry<br>Optical and Electronic Materials<br>Characterization and Evaluation Materials<br>
• 出版者：Springer New York
• ISSN：1573-482X
• 卷排序：27

文摘

Low optical reflectance in silicon nanowires (SiNWs) is obtained when a stirring mechanism is introduced during the post-cleaning process. Achieving low optical reflectance may be of great interest for the production of solar cells. These SiNWs were fabricated at room temperature employing the electroless etching technique using an etching solution consisting of silver nitrate and hydrofluoric acid. Experiments show that residual silver dendrites left in the SiNWs array during the electroless etching process may interfere with the reflectance. The results exhibit an optical reflectance in SiNWs as low as 0.7 %.