Understanding Electrical Conduction States in WO3 Thin Films Applied for Resistive Random-Access Memory

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• 作者：Thi Kieu Hanh Ta ; Kim Ngoc Pham ; Thi Bang Tam Dao…
• 关键词：Resistive switching ; WO3 thin films ; trap ; controlled space ; charge limited conduction ; Fowler–Nordheim tunneling ; ballistic conduction
• 刊名：Journal of Electronic Materials
• 出版年：2016
• 出版时间：May 2016
• 年：2016
• 卷：45
• 期：5
• 页码：2423-2432
• 全文大小：2,573 KB
• 参考文献：1.S.H. Jo, Doctoral Thesis, The University of Michigan, 2010.
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• 作者单位：Thi Kieu Hanh Ta (1)
  Kim Ngoc Pham (1)
  Thi Bang Tam Dao (1)
  Dai Lam Tran (2)
  Bach Thang Phan (1) (3)
  
  1. Faculty of Materials Science, University of Science, Vietnam National University, Ho Chi Minh City, Viet Nam
  2. Vietnam Academy of Science and Technology, Ha Noi, Viet Nam
  3. Laboratory of Advanced Materials, University of Science, Vietnam National University, Ho Chi Minh City, Viet Nam
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

The electrical conduction and associated resistance switching mechanism of top electrode/WO₃/bottom electrode devices [top electrode (TE): Ag, Ti; bottom electrode (BE): Pt, fluorine-doped tin oxide] have been investigated. The direction of switching and switching ability depended on both the top and bottom electrode material. Multiple electrical conduction mechanisms control the leakage current of such switching devices, including trap-controlled space-charge, ballistic, Ohmic, and Fowler–Nordheim tunneling effects. The transition between electrical conduction states is also linked to the switching (SET–RESET) process. This is the first report of ballistic conduction in research into resistive random-access memory. The associated resistive switching mechanisms are also discussed.