Recent development of studies on the mechanism of resistive memories in several metal oxides

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• 作者：XueZeng Tian (1)
  LiFen Wang (1)
  XiaoMin Li (1)
  JiaKe Wei (1)
  ShiZe Yang (1)
  Zhi Xu (1)
  WenLong Wang (1)
  XueDong Bai (1)
  
• 关键词：resistive switching effect ; valence change memory ; electrode engineering ; in ; situ TEM
• 刊名：SCIENCE CHINA Physics, Mechanics & Astronomy
• 出版年：2013
• 出版时间：December 2013
• 年：2013
• 卷：56
• 期：12
• 页码：2361-2369
• 全文大小：1,554 KB
• 作者单位：XueZeng Tian (1)
  LiFen Wang (1)
  XiaoMin Li (1)
  JiaKe Wei (1)
  ShiZe Yang (1)
  Zhi Xu (1)
  WenLong Wang (1)
  XueDong Bai (1)
  
  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
  
• ISSN：1869-1927

文摘

Resistive switching random access memories (RRAM) have been considered to be promising for future information technology with applications for non-volatile memory, logic circuits and neuromorphic computing. Key performances of those resistive devices are approaching the realistic levels for production. In this paper, we review the progress of valence change type memories, including relevant work reported by our group. Both electrode engineering and in-situ transmission electron microscopy (TEM) high-resolution observation have been implemented to reveal the influence of migration of oxygen anions/vacancies on the resistive switching effect. The understanding of resistive memory mechanism is significantly important for device applications.