Wafer design of widely tunable vertical-external-cavity surface-emitting laser with broadband gain spectrum

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• 作者：Peng Zhang (1)
  Maohua Jiang (1)
  Yanbin Men (2)
  Renjiang Zhu (1)
  Yiping Liang (1)
  Yu Zhang (1)
  
  1. College of Physics and Electronic Engineering ; Chongqing Normal University ; Chongqing ; 400047 ; P.R. China
  2. College of Physics Science and Information Engineering ; Hebei Normal University ; Shijiazhuang ; 050016 ; P.R. China
  
• 关键词：Vertical ; external ; cavity ; Surface ; emitting laser ; Tunable ; Broadband gain ; Wafer design
• 刊名：Optical and Quantum Electronics
• 出版年：2015
• 出版时间：February 2015
• 年：2015
• 卷：47
• 期：2
• 页码：423-431
• 全文大小：1,000 KB
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• 刊物主题：Optics, Optoelectronics, Plasmonics and Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
• 出版者：Springer US
• ISSN：1572-817X

文摘

The wafer design of a widely tunable InGaAs/GaAs quantum wells vertical-external-cavity surface-emitting laser (VECSEL) at 1,064聽nm was presented. A GaAs/AlAs based double-band mirror (DBM) was employed to yield sufficient reflectivity ( \(>\) 0.999) over 118聽nm wavelength coverage, which is 54聽nm wider than that of a usually used distributed Bragg reflector. In the active region, an antiresonant subcavity, formed by the DBM and the air-semiconductor interface, was introduced to produce extended longitudinal confinement factor, and two kinds of InGaAs quantum wells with different In composition were used to expand the material gain. As a result, a broadband gain spectrum of the semiconductor wafer with 85聽nm FWHM bandwidth was obtained, and this was valuable for broadband performance of a tunable VECSEL.