Growth and characterization of the La₃Ga_4.85Fe_0.15SiO₁₄ piezoelectric single crystal

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• 作者：Renqin Dou ; Wenpeng Liu ; Qi Zhang ; Qingli Zhang ; Shoujun Ding…
• 刊名：Applied Physics A
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：123
• 期：1
• 全文大小：
• 刊物类别：Physics and Astronomy
• 刊物主题：Condensed Matter Physics; Optical and Electronic Materials; Nanotechnology; Characterization and Evaluation of Materials; Surfaces and Interfaces, Thin Films; Operating Procedures, Materials Treatment
• 出版者：Springer Berlin Heidelberg
• ISSN：1432-0630
• 卷排序：123

文摘

A new piezoelectric single crystal La₃Ga_4.85Fe_0.15SiO₁₄ (LGFS) was grown by the Czochralski method firstly. Its structural parameters were obtained by Rietveld refinement to the X-ray diffraction. The effective segregation coefficient k_eff of Fe in the LGFS was determined to be 0.6. The cost of LGFS is reduced due to the doping of cheap Fe. The crystal density was measured to be 5.7 g cm−3 by the buoyancy method. The defect structure of LGFS crystal was investigated by the chemical etching with 85% H₂SO₄ etchant. Dislocation etching pit patterns of LGFS crystal are consistent with the corresponding atomic arrangement schematics. Compared with LGS, LGN, LGT, and LGAS crystal, the LGFS crystal exhibits outstanding dielectric and piezoelectric properties, and ɛ₁₁, ɛ₃₃, d₁₁, and d₁₄ are 20.86, 51.99, 6.5 pC/N, and −5.10 pC/N, respectively. Therefore, LGFS may be a new potential piezoelectric crystal with high performance and low expense.