Dielectric relaxation and conduction mechanisms in sprayed TiO2 thin films as a function of the annealing temperature

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• 作者：Albert Juma ; Ilona Oja Acik ; Arvo Mere ; Malle Krunks
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：122
• 期：4
• 全文大小：1,271 KB
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• 作者单位：Albert Juma (1) (2)
  Ilona Oja Acik (1)
  Arvo Mere (1)
  Malle Krunks (1)
  
  1. Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086, Tallinn, Estonia
  2. Department of Physics and Astronomy, Botswana International University of Science and Technology, Private Bag 16, Palapye, Botswana
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Optical and Electronic Materials
  Nanotechnology
  Characterization and Evaluation Materials
  Surfaces and Interfaces and Thin Films
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-0630

文摘

The electrical properties of TiO₂ thin films deposited by chemical spray pyrolysis onto Si substrates were investigated in the metal–oxide–semiconductor (MOS) configuration using current–voltage characteristics and impedance spectroscopy. The electrical properties were analyzed in relation to the changes in microstructure induced during annealing in air up to a temperature of 950 °C. Anatase to rutile transformation started after annealing at 800 °C, and at 950 °C, only the rutile phase was present. The dielectric relaxation strongly depended upon the microstructure of TiO₂ with the dielectric constant for the anatase phase between 45 and 50 and that for the rutile phase 123. Leakage current was reduced by three orders of magnitude after annealing at 700 °C due to the densification of the TiO₂ film. A double-logarithmic plot of the current–voltage characteristics showed a linear relationship below 0.12 V consistent with Ohmic conduction, while space-charge-limited conduction mechanism as described by Child’s law dominated for bias voltages above 0.12 V.