Scalable, Low-Noise Architecture for Integrated Terahertz Imagers

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• 作者：Domonkos Gergelyi ; Péter F?ldesy…
• 关键词：CMOS ; based terahertz detector ; FET ; HEMT ; Scalable ; Low noise ; Integrated sensor architecture ; Compressed sensing ; Imaging
• 刊名：International Journal of Infrared and Millimeter Waves
• 出版年：2015
• 出版时间：June 2015
• 年：2015
• 卷：36
• 期：6
• 页码：520-536
• 全文大小：1,891 KB
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• 作者单位：Domonkos Gergelyi (1) (2)
  Péter F?ldesy (1) (3)
  ákos Zarándy (1) (2)
  
  1. Faculty of Information Technology and Bionics, Pázmány Péter Catholic University, Práter St. 50/A, Budapest, 1083, Hungary
  2. Computer and Automation Research Institute, Hungarian Academy of Sciences, Kende St. 13-17, Budapest, 1111, Hungary
  3. Research Centre for Natural Sciences, Hungarian Academy of Sciences, Konkoly Thege M. Rd. 29-33, Budapest, 1121, Hungary
  
• 刊物类别：Physics and Astronomy
• 刊物主题：None Assigned
• 出版者：Springer New York
• ISSN：1866-6906

文摘

We propose a scalable, low-noise imager architecture for terahertz recordings that helps to build large-scale integrated arrays from any field-effect transistor (FET)- or HEMT-based terahertz detector. It enhances the signal-to-noise ratio (SNR) by inherently enabling complex sampling schemes. The distinguishing feature of the architecture is the serially connected detectors with electronically controllable photoresponse. We show that this architecture facilitate room temperature imaging by decreasing the low-noise amplifier (LNA) noise to one-sixteenth of a non-serial sensor while also reducing the number of multiplexed signals in the same proportion. The serially coupled architecture can be combined with the existing read-out circuit organizations to create high-resolution, coarse-grain sensor arrays. Besides, it adds the capability to suppress overall noise with increasing array size. The theoretical considerations are proven on a 4 by 4 detector array manufactured on 180?nm feature sized standard CMOS technology. The detector array is integrated with a low-noise AC-coupled amplifier of 40?dB gain and has a resonant peak at 460?GHz with 200?kV/W overall sensitivity.