Growth mechanism of CdS film prepared by chemical bath deposition

详细信息    查看全文

• 作者：Xing-Yu Peng (1) (2)
  Hong-Wei Gu (1)
  Teng Zhang (1)
  Fa-Zhu Ding (1)
  Fei Qu (1)
  Hong-Yan Wang (1) (2)
  
• 关键词：CdS ; Chemical bath deposition ; Ammonia concentration ; Growth mechanism
• 刊名：Rare Metals
• 出版年：2014
• 出版时间：June 2014
• 年：2014
• 卷：33
• 期：3
• 页码：324-329
• 全文大小：
• 参考文献：1. Vemuri RS, Gullapalli SK, Zubia D, McClure JC, Ramana CV. Structural and chemical properties of highly oriented cadmium sulfide (CdS) cauliflower films. Chem Phys Lett. 2010;495(4-):232. CrossRef
  2. Castro-Rodriguez R, Mendez-Gamboa J, Perez-Quintana I, Medina-Ezquivel R. CdS thin films growth by fast evaporation with substrate rotation. Appl Surf Sci. 2011;257(22):9480. CrossRef
  3. Aksay S, Polat M, Ozer T, Kose S, Gurbuz G. Investigations on structural, vibrational, morphological and optical properties of CdS and CdS/Co films by ultrasonic spray pyrolysis. Appl Surf Sci. 2011;257(23):10072. CrossRef
  4. Muffler HJ, Fischer CH, Giersig M, Bar M, Lux-Steiner MC. Mechanics of the ion layer gas reaction-A preparation method of nanocrystalline thin layers. J Appl Phys. 2002;91(10):6691. CrossRef
  5. Senthamilselvi V, Saravanakumar K, Anandhi R, Ravichandran AT, Ravichandran K. Effect of annealing on the stoichiometry of CdS films deposited by SILAR technique. Optoelectron Adv Mater. 2011;5(10):1072.
  6. Zarebska K, Skompska M. Electrodeposition of CdS from acidic aqueous thiosulfate solution-investigation of the mechanism by electrochemical quartz microbalance technique. Electrochim Acta. 2011;56(16):5731. CrossRef
  7. Liu FY, Lai YQ, Liu J, Wang B, Kuang SS, Zhang ZA, Li J, Liu YX. Characterization of chemical bath deposited CdS thin films at different deposition temperature. J Alloys Compd. 2010;493(1-):305. CrossRef
  8. Peng XY, Gu HW, Zhang T, Qu F, Ding FZ, Wang HY. Morphological evolution of CdS films prepared by chemical bath deposition. Rare Met. 2013;32(4):380. CrossRef
  9. Peng XY, Gu HW, Qu F, Ding FZ, Zhang T, Wang HY. Structural and morphological evolution studies of CdS thin films prepared by chemical bath deposition by different agitation methods. Chin J Rare Met. 2013;37(5):762.
  10. Jackson P, Hariskos D, Lotter E, Paetel S, Wuerz R, Menner R, Wischmann W, Powalla M. New world record efficiency for Cu(In,Ga)Se₂ thin-film solar cells beyond 20?%. Prog Photovolt. 2011;19(7):894.
  11. Wu X, Keane JC, Dhere RG, DeHart C, Duda A, Gessert TA, Asher S, Levi DH, Sheldon P. 16.5?%-efficient CdS/CdTe polycrystalline thin-film solar cell. In: Proceedings of the 17th European Photovoltaic Solar Energy Conference, Munich, 2001. 995.
  12. Ortegaborges R, Lincot D. Mechanism of chemical bath deposition of cadmium-sulfide thin-film in the ammonia-thiourea system—in situ kinetic-study and modelization. J Electrochem Soc. 1993;140(12):3464. CrossRef
  13. Mazon-Montijo DA, Sotelo-Lerma M, Rodriguez-Fernandez L, Huerta L. AFM, XPS and RBS studies of the growth process of CdS thin films on ITO/glass substrates deposited using an ammonia-free chemical process. Appl Surf Sci. 2010;256(13):4280. CrossRef
  14. Yeh CY, Lu ZW, Froyen S, Zunger A. Zinc-blende-wurtzite polytypism in semiconductors. Phys Rev B. 1992;46(16):10086. CrossRef
  15. Kaur I, Pandya DK, Chopra KL. Growth-kinetics and polymorphism of chemically deposited CdS films. J Electrochem Soc. 1980;127(4):943. CrossRef
  16. Zhong ZY, Cho ES, Kwon SJ. Characterization of the ZnS thin film buffer layer for Cu(In,Ga)Se₂ solar cells deposited by chemical bath deposition process with different solution concentrations. Mater Chem Phys. 2012;135:287.
  17. Zhang TW, Zhu CJ, Wang CZ, Li J. Preparation and characterization of Cd_{1- / x} Zn _{/ x} S buffer layers for thin film solar cells. Rare Met. 2013;32(1):47.
  
• 作者单位：Xing-Yu Peng (1) (2)
  Hong-Wei Gu (1)
  Teng Zhang (1)
  Fa-Zhu Ding (1)
  Fei Qu (1)
  Hong-Yan Wang (1) (2)
  
  1. Key Laboratory of Applied Superconductivity, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190, China
  2. University of Chinese Academy of Sciences, Beijing, 100049, China
  
• ISSN：1867-7185

文摘

In this paper, sodium citrate was adopted as a complexing agent and ammonia merely served as pH adjustor to investigate the growth mechanism of CdS film. The growth rate, structural properties, surface morphology, microstructure, and optical properties of CdS films were studied by profilometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and spectrophotometer, respectively. The SEM images show that CdS films prepared with higher ammonia concentration have lower nucleation density on substrate. SEM and EDS results show that the formation of Cd(OH)2 is not required in the growth of CdS film. As the ammonia concentration increases, the sites that previously adsorbed S2?/sup> are taken by OH?/sup> which leads to lower S2?/sup> density on substrate. CdS film forms through direct reaction of Cd2+ with the S2?/sup> which are adsorbed on the substrate. Lower S2?/sup> density on the substrate results in the decrease of particle density on the substrate. The as-deposited CdS films have relatively high-average transmittance (~80?%) in the wavelength range from 500 to 1,000?nm which makes them suitable to be used in solar cell.