Near-infrared luminescence of Tm3+-doped CeO2 films based on silicon substrates

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• 作者：Xue Yin ; Shenwei Wang ; Ling Li ; Guangyao Mu ; Miaoling Huang ; Lixin Yi
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：122
• 期：2
• 全文大小：1,333 KB
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• 作者单位：Xue Yin (1)
  Shenwei Wang (1)
  Ling Li (1)
  Guangyao Mu (1)
  Miaoling Huang (1)
  Lixin Yi (1)
  
  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Shangyuancun 3#, Haidian Ward, Beijing, 100044, People’s Republic of China
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Optical and Electronic Materials
  Nanotechnology
  Characterization and Evaluation Materials
  Surfaces and Interfaces and Thin Films
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-0630

文摘

CeO₂/Tm₂O₃ multilayer films were deposited on silicon substrates by electron-beam evaporation. Tm3+ ions were doped in CeO₂ after the films were annealed in oxygen atmosphere at 1000 °C. The doping concentration of Tm3+ varies in the range of 0.1–3 mol%. A series of near-infrared emission peaks were observed under the excitation of 330 nm, which correspond to 1G₄–^{3H₅, 3H₄–3H₆, 1G₄–3H₄, 3H₅–3H₆, 3F₂–3H₅, 3H₄–3F₄, 1G₄–3F_3,2 and 3F₄–3H₆ transitions of Tm3+, respectively. The dominant transition of 3H₄–3H₆ near 805 nm was within optical transmission window. The luminescence properties and the crystal structure of CeO₂:Tm3+ films were investigated by excitation and emission spectroscopy and X-ray diffraction. Meanwhile, the substitution process of Ce4+ by Tm3+ was illustrated, and lattice expansion of the matrix CeO₂ gave rise to the increase in FWHM of CeO₂ diffraction peaks. In addition, the effect of Tm3+ concentration on photoluminescence was also studied, and the optimal concentration of Tm3+ was 0.5 mol%.}