Surface acoustic wave controlled charge dynamics in a thin InGaAs quantum well

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• 作者：F. J. R. Schülein (12) hubert.krenner@physik.uni-augsburg.de
  J. Pustiowski (12)
  K. Müller (3)
  M. Bichler (3)
  G. Koblmüller (3)
  J. J. Finley (3)
  A. Wixforth (12)
  H. J. Krenner (12)
• 刊名：JETP Letters
• 出版年：2012
• 出版时间：August 2012
• 年：2012
• 卷：95
• 期：11
• 页码：575-580
• 全文大小：483.2 KB
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• 作者单位：1. Lehrstuhl für Experimentalphysik 1 and Augsburg Centre for Innovative Technologies (ACIT), Universit?t Augsburg, 86159 Augsburg, Germany2. Center for NanoScience CeNS, 80539 Munich, Germany3. Walter Schottky Institut and Physik Department, Technische Universitat München, 85748 Garching, Germany
• ISSN：1090-6487

文摘

We experimentally study the optical emission of a thin quantum well and its dynamic modulation by a surface acoustic wave (SAW). We observe a characteristic transition of the modulation from one maximum to two maxima per SAW cycle as the acoustic power is increased which we find in good agreement with numerical calculations of the SAW controlled carrier dynamics. At low acoustic powers the carrier mobilities limit electron-hole pair dissociation, whereas at high power levels the induced electric fields give rise to efficient acousto-electric carrier transport. The direct comparison between the experimental data and the numerical simulations provide an absolute calibration of the local SAW phase.